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NASA’s innovative passivation process consists of exposing in-situ Physical Vapor Deposited oxide-free AI samples in a high or ultra-high vacuum chamber at ambient temperature to a low-pressure reactive gas of xenon difluoride (XeF2) immediately after depositing the AI layer. In this chemisorption process, the XeF2 is adsorbed on the surface of the AI layer, and due to the affinity of Al to fluorine molecules, the weakly-bound Xe dissociates and is pumped out of the chamber. A thin AlF3 overcoat layer is produced as a result. Other embodiments of the invention include the use of alternative processing gasses for the passivation treatment, or the utilization of a plasma source to increase the ion/atom ratio of the incident fluorine species resulting after XeF2 dissociation. Similarly, different mirror substrates materials with suitable surface characteristics in the FUV could be employed. In addition to the improved FUV reflectance, environmental stability, and maintained efficiency at higher wavelengths of the resulting Al mirrors, this NASA process has several unique features. Firstly, the entire process is carried out at ambient temperature, eliminating the need for high-temperature fluoride deposition. Secondly, the process is highly scalable, limited only by the size of the coating chamber where the passivation of XeF2 is carried out. Finally, the process can be manipulated to conform to any geometry, enabling its use for curved optics. While NASA originally developed the passivation of oxide-free aluminum coatings to realize reflectivity enhancement in the Far-Ultraviolet for the Large UV/Optical/IR Surveyor (LUVOIR), it may also be useful to companies that manufacture ground-based or space-based optical systems with sensitivity to the FUV spectrum. Examples include optics for space telescopes with reflective elements, vacuum-ultraviolet (VUV) plasma analysis tools, photolithography instrumentation, and wafer inspection tools.

Several of the patented methods included in this suite of technologies enable super-hetero-epitaxy of rhombohedral/cubic compound semiconductors on specially oriented trigonal (e.g. sapphire) or hexagonal (e.g. quartz) crystal wafer substrates. This includes alignment of the growth crystal lattice with the underlying substrate lattice to minimize misfit strain-induced dislocation defects in the growing crystal. Thus thicker, defect-free crystal layers can be made. Rhombohedral/Cubic crystal twin defects which is 60 degree rotated on [111] orientation in a rhombohedral/cubic SiGe layer structure can be reduced to well less than 1% by volume, essentially providing a defect-free semiconductor material. Alternately, engineered lattice structures with a high degree of twinning can provide SiGe with improved thermoelectric properties due to the phonon scattering that inhibits thermal conduction without compromising electrical conductivity. Additional patented technologies in this suite provide for physical vapor deposition (PVD) growth methods utilizing molten sputtering targets and thermal control of heated substrates, including electron beam heating, in order to give the atoms in the sputtered vapor or on the substrate surface the energy needed for the desired crystal growth. The remaining patented technologies enable x-ray diffraction methods for detecting and mapping crystal twin defects across the entire as-grown semiconductor layer. These defects are critical to the performance of any semiconductor device manufactured from such compound semiconductor materials.